A F M Anhar Uddin Bhuiyan wearing a blue suit, pink tie and glasses and smiling at the camera.

Anhar Bhuiyan, Ph.D.

Assistant Professor

College
Francis College of Engineering
Department
Electrical and Computer Engineering
Phone
978-934-3382
Office
Ball Hall, Room 327
Email
afmanharuddin_bhuiyan@uml.edu
Links

Expertise

(Ultra)wide Bandgap Semiconductors, Superconductors, Epitaxial Growth and Characterization, Device Design and Fabrication, Radiation, Thermal Management

Research Interests

High-power and high-frequency Electronics, Ultraviolet Optoelectronics, Radiation-hardened and Nuclear/Extreme-environment Electronics, Quantum and Cryogenic electronics, Advanced Thermal Management in Semiconductor Technologies

Education

  • Doctor of Philosophy (Ph.D.): Electrical Engineering, The Ohio State University, Columbus, Ohio
  • Master of Science (M.S.): Electrical Engineering, The Ohio State University, Columbus, Ohio
  • Bachelor of Science (B.S): Electrical and Electronic Engineering (2014), Bangladesh University of Engineering and Technology, Dhaka, Bangladesh

Biosketch

Anhar Bhuiyan is a Tenure-Track Assistant Professor in the Department of Electrical and Computer Engineering at University of Massachusetts Lowell, where he leads research on wide and ultrawide bandgap semiconductor materials and devices. His work integrates epitaxial growth, advanced characterization, and device engineering, with a particular focus on radiation-hardened and thermally managed electronics for high-power applications in space, defense, and nuclear environments. Before joining 51视频, he earned his Ph.D. from The Ohio State University (OSU) in 2023, where his research focused on Metalorganic Chemical Vapor Deposition of ultra-wide bandgap Ga2O3 semiconductors. During his doctoral studies, he was nominated for the 'Exemplary Graduate Student Researcher' in the College of Engineering at OSU and was awarded the 鈥楶residential Fellowship Award鈥 鈥 which is considered as the highest honor from the Graduate School at OSU. He also won the 'Best Student Presentation Award' at the 63rd Electronic Materials Conference in 2021. His research has received widespread recognition, with several publications featured as Editor鈥檚 Pick, Hot Paper, and Featured Article in leading scientific journals. Multiple articles have also been highlighted among the Most Cited Articles, Most Read Editor鈥檚 Picks, and Most Read Scilights. As a faculty member at 51视频, he is the recipient of the Ralph E. Powe Junior Faculty Enhancement Award (2025), sponsored by Oak Ridge Associated Universities.

Selected Awards and Honors

  • Ralph E. Powe Junior Faculty Enhancement Award (2025), Oak Ridge Associated Universities (ORAU)
  • Presidential Fellowship Award (2022), The Ohio State University
  • Best Student Presentation Award (2021), (63rd Electronic Materials Conference)

Selected Publications

  • S. Margiotta, B. Liu, S. A. Khan, G. C. Ortiz, A. Ibreljic, J. Hwang, A F M A. U. Bhuiyan, 鈥淭hermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junctions鈥 J. Vac. Sci. Technol. A 43, 042701 (2025).
  • A F M A. U. Bhuiyan, L. Meng, D. S. Yu, S. Dhara, H.-L. Huang, V. G. T. Vangipuram, J. Hwang, S. Rajan, H. Zhao, 鈥淓lectrical and Structural Properties of In-Situ MOCVD Grown Al2O3/Ga2O3 and Al2O3/(AlxGa1-x)2O3 MOSCAPs鈥, J. Appl. Phys. 137, 174101 (2025).
  • S. A. Khan, A. Ibreljic, S. Margiotta, and A F M A. U. Bhuiyan, 鈥淟ow-pressure CVD grown Si-doped 脽-Ga2O3 films with promising electron mobilities and high growth rates鈥, Appl. Phys. Lett. 126, 012103 (2025).
  • S. A. Khan, S. Saha, U. Singisett, and A F M A. U. Bhuiyan, 鈥淩adiation Resilience of 脽-Ga2O3 Schottky Barrier Diodes Under High Dose Gamma Radiation鈥, J. Appl. Phys. 136, 225701 (2024).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, and H. Zhao, 鈥溾 Phys. Status Solidi RRL 2300224. (2023).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, J. Sarker, C. Chae, B. Mazumder, J. Hwang, and H. Zhao, 鈥淢etalorganic Chemical Vapor Deposition of 脽-(AlxGa1-x)2O3 thin films on (001) 脽-Ga2O3 substrates鈥, APL Materials 11, 041112 (2023).
  • (Invited Tutorial) A F M A. U. Bhuiyan, Z. Feng, L. Meng, and H. Zhao, 鈥淭utorial: Metalorganic Chemical Vapor Deposition of 脽-Ga2O3 thin films, alloys and heterostructures鈥, Journal of Applied Physics 133, 211103 (2023).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, 鈥淢OCVD In-situ Growth of Al2O3 Dielectric on 脽-Ga2O3 and 脽-(AlxGa1-x)2O3 thin films鈥, J. Appl. Phys. 132, 165301 (2022).
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, 鈥淢OCVD growth and band offsets of ?-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates鈥, J. Vac. Sci. Technol. A 40, 062704 (2022).
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan and H. Zhao, 鈥淪i doping in MOCVD grown (010) 脽-(AlxGa1-x)2O3 thin films鈥 J. Appl. Phys.131, 145301 (2022).
  • A F M A. U. Bhuiyan, Z. Feng, H. -L. Huang, L. Meng, J. Hwang, H. Zhao, 鈥淏and offsets at metalorganic chemical vapor deposited 脽-(AlxGa1-x)2O3/脽-Ga2O3 interfaces - Crystalline orientation dependence鈥 J. Vac. Sci. Technol. A 39, 063207 (2021).
  • A F M A. U. Bhuiyan, Z. Feng, H. -L. Huang, L. Meng, J. Hwang, H. Zhao, 鈥淢etalorganic chemical vapor deposition of a-Ga2O3 and a-(AlxGa1-x)2O3 thin films on m-plane sapphire substrates鈥, APL Materials 9, 101109 (2021).
  • (Invited Featured Paper) A F M A. U. Bhuiyan, Z. Feng, L. Meng, H. Zhao, 鈥淢OCVD growth of (010) 脽-(AlxGa1-x)2O3 thin films鈥 J. Mater. Res. 36, 4804 (2021).
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, 鈥淢OCVD epitaxy of ultra-wide bandgap 脽-(AlxGa1-x)2O3 with high-Al composition on (100) 脽-Ga2O3 substrates鈥, ACS Crys. Growth Des., 20, 6722 (2020).
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, and H. Zhao, 鈥淩esponse to Comment on "Phase Transformation in MOCVD Growth of (AlxGa1-x)2O3 Thin Films鈥, APL Materials, 8, 089102, (2020).
  • A F M A. U. Bhuiyan, S. Subrina, 鈥淎symmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor鈥 Silicon 14, 2489 (2021).
  • (Editor鈥檚 Pick) A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H. -L. Huang, J. Hwang, H. Zhao, 鈥淏and Offsets of (100) 脽-(AlxGa1-x)2O3/脽-Ga2O3 Heterointerfaces Grown via MOCVD鈥, Appl. Phys. Lett. 117, 252105 (2020).
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, and H. Zhao, 鈥淧hase Transformation in MOCVD Growth of (AlxGa1-x)2O3 Thin Films鈥, APL Materials, 8, 031104 (2020). 'Most Cited Articles from 2020 and 2021' in APL Materials.
  • (Editor鈥檚 Pick) A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H. -L. Huang, J. Hwang, H. Zhao, 鈥淢OCVD epitaxy of 脽-(AlxGa1-x)2O3 thin films on (010) Ga2O3 substrates and N-type doping鈥, Appl. Phys. Lett., 115, 120602 (2019); 鈥淢ost Read Editor鈥檚 Pick in 2019鈥
  • E. Kluth, A F M A. U. Bhuiyan, L. Meng, J. Bl盲sing, H. Zhao, R. Goldhahn, and M. Feneberg, 鈥淒etermination of anisotropic optical properties of MOCVD grown m-plane a-(AlxGa1-x)2O3 alloys鈥, Jpn. J. Appl. Phys. 62, 051001 (2023).
  • Z. Ren, H.-C. Huang, H. Lee, C. Chan, H. C Roberts, X. Wu, A. Waseem, A F M A. U. Bhuiyan, H. Zhao, W. Zhu, and X. Li, 鈥淭emperature Dependent Characteristics of Lateral 脽-Ga2O3 Fin-MOSFETs by MacEtch鈥, Appl. Phys. Lett. 123, 043505 (2023).
  • J. F. McGlone, H. Ghadi, E. Cornuelle, A. Armstrong, G. Burns, Z. Feng, A F M A. U. Bhuiyan, H. Zhao, A. R. Arehart, and S. A. Ringel, 鈥淧roton Radiation Effects on Electronic Defect States in High-Mobility MOCVD-Grown (010) 脽-Ga2O3鈥, J. Appl. Phys. 133, 045702 (2023).
  • L. Meng, A F M A. U. Bhuiyan, Z. Feng, H.-L. Huang, J. Hwang, and H. Zhao, 鈥淢etalorganic chemical vapor deposition of (100) 脽-Ga2O3 on on-axis Ga2O3 substrates鈥, J. Vac. Sci. Technol. A 40, 062706 (2022).
  • C. N. Saha, A. Vaidya, A F M A. U. Bhuiyan, L. Meng, H. Zhao, and U. Singisetti 鈥淗ighly Scaled 脽-Ga2O3 thin channel MOSFET with 5.12 MV/cm average breakdown field and enhanced RF performance鈥 Appl. Phys. Lett. 122, 182106 (2023).
  • S. Sharma, L. Meng, A F M A. U. Bhuiyan, Z. Feng, D. Eason, H. Zhao and U. Singisetti, 鈥淰acuum annealed 脽-Ga2O3 recess channel MOSFETs with 8.56 kV Breakdown Voltage鈥, IEEE Trans Electron Devices 43(12), 2029 (2022).
  • (Editor鈥檚 Pick) H.-C. huang, Z. Ren, A F M A. U. Bhuiyan, Z. Feng, Z. Yang, X. Luo, A. Huang, A. Green, K. Chabak, H. Zhao, and Xiuling Li, 鈥溍-Ga2O3 FinFETs with ultra-low hysteresis by Plasma-Free Metal-Assisted Chemical Etching鈥 Appl. Phys. Lett. 121, 052102 (2022).
  • K. Zhang, C. Hu, A F M A. U. Bhuiyan, M. Zhu, V. G. T. Vangipuram, M. R. Karim, B. H. D. Jayatunga, J. Hwang, K. Kash, and H. Zhao, 鈥淧ulsed-mode MOCVD growth of ZnSn(Ga)N2 and determination of the valence band offset with GaN鈥 ACS Crys. Growth Des. 22, 5004 (2022).
  • L. Meng, Z. Feng, A F M A. U. Bhuiyan, and H. Zhao, 鈥淗igh-Mobility MOCVD 脽-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium鈥 Cryst. Growth Des. 22(6), 3896 (2022).
  • S. Saha, L. Meng, Z. Feng, A F M A. U. Bhuiyan, H. Zhao, and U. Singisetti, 鈥淪chottky diode characteristics on high-growth rate LPCVD 脽-Ga2O3 films on (010) and (001) Ga2O3 substrates鈥 Appl. Phys. Lett. 120, 122106 (2022).
  • N. K. Kalarickal, A. Fiedler, S. Dhara, H.-L. Huang, A F M A. U. Bhuiyan, M. W. Rahman, T. Kim, Z. Xia, Z. J. Eddine, A. Dheenan, M. Brenner, H. Zhao, J. Hwang, and S. Rajan, 鈥淧lanar and three-dimensional damage-free etching of 脽-Ga2O3 using atomic gallium flux鈥 Appl. Phys. Lett. 119, 123503 (2021).
  • (Featured Article) Y. Zheng, Z. Feng, A F M A. U. Bhuiyan, L. Meng, S. Dhole, Q. Jia, H. Zhao, J.-H. Seo, 鈥淟arge-Size Free-Standing Single-crystal 脽-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off鈥 J. Mater. Chem. C 9, 6180 (2021); 鈥2021 Journal of Materials Chemistry C HOT Papers鈥
  • (Featured Article) J. M. Johnson, H.-L. Huang, M. Wang, S. Mu, J. B. Varley, A. F. M. A. U. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, H. Zhao, C. G. Van de Walle, and J. Hwang, 鈥淎tomic Scale Investigation of Aluminum Incorporation, Defects, and Phase Stability in 脽-(AlxGa1-x)2O3 Films鈥 APL Materials 9, 051103 (2021).
  • Z. Feng, A. F. M. A. U. Bhuiyan, N. K. Kalarickal, S. Rajan and H. Zhao, 鈥淢g acceptor doping in MOCVD (010) 脽-Ga2O3鈥 Appl. Phys. Lett. 117, 222106 (2020).
  • (Editor鈥檚 Pick) Hemant Ghadi, Joe F. McGlone, Zixuan Feng, A F M A. U. Bhuiyan, Hongping Zhao, Aaron R. Arehart, and Steven A. Ringel, 鈥淚nfluence of growth temperature on defect states throughout the bandgap of MOCVD-grown 脽-Ga2O3鈥 Appl. Phys. Lett. 117, 172106 (2020).
  • (Editor鈥檚 Pick) A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, 鈥淢OCVD growth of 脽-phase (AlxGa1-x)2O3 on (-201) 脽-Ga2O3 substrates鈥 Appl. Phys. Lett. 117, 142107 (2020).
  • J. Sarker, A F M A. U. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, 鈥淒irect observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography鈥, J. Phys. D: Appl. Phys. 54 184001 (2021).
  • N. K. Kalarickal, Z. Feng, A F M A. U. Bhuiyan, Z. Xia, J. Mcglone, W. Moore, A. R. Arehart, S. A. Ringel, H. Zhao, S. Rajan, Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors, IEEE Trans Electron Devices 68 (1), 29 (2020).
  • Z. Feng, A F M A. U. Bhuiyan, Z. Xia, W. Moore, Z. Chen, J. F. McGlone, D. R. Daughton, A. R. Arehart, S. A. Ringel, S. Rajan, H. Zhao, 鈥淧robing charge transport and background doping in MOCVD grown (010) 脽-Ga2O3鈥, Phys. Status Solidi RRL, 14 (8), 2000145 (2020).
  • J. Sarker, S. Broderick, A F M A. U. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, 鈥淎 combined approach of Atom Probe Tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3鈥, Appl. Phys. Lett., 116, 152101 (2020).
  • H. Ghadi, J. F. McGlone, C. M. Jackson, E. Farzana, Z. Feng, A F M A. U. Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, 鈥淔ull bandgap defect state characterization of 脽-Ga2O3 grown by metal organic chemical vapor deposition鈥, APL Materials, 8, 021111 (2020).
  • (Featured Article) Z. Feng, A F M A. U. Bhuiyan, M. R. Karim, H. Zhao, 鈥淢OCVD homoepitaxy of Si-doped (010) 脽-Ga2O3 thin films with superior transport properties鈥, Appl. Phys. Lett., 114, 250601 (2019); Highlighted in 鈥楽cilight 2019鈥, 鈥淢ost Read Scilights from 2018-2019鈥

Selected Presentations

  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, and H. Zhao, 鈥淧ushing the Al composition limit up to 99% in MOCVD 脽-(AlxGa1-x)2O3 films using TMGa as Ga precursor鈥 5th International Workshop on Gallium Oxide and Related Materials- IWGO, August 2023 (Buffalo, New York).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, J. Sarkar, M. Zhu, B. Mazumder, J. Hwang, and H. Zhao, 鈥淢OCVD epitaxial development of differently oriented 脽-(AlxGa1-x)2O3 films with fast growth rates and Al composition up to 63%鈥 4th International Workshop on Gallium Oxide and Related Materials- IWGO, October 2022 (Nagano, Japan).
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, 鈥淢OCVD Development and Bandoffsets of e-Ga2O3 on GaN, AlN, YSZ and c-Sapphire Substrates鈥 EMC, June 2022. (Columbus, Ohio)
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan and H. Zhao, 鈥淢OCVD growth of Si Doped (010) 脽-(AlxGa1-x)2O3 Films-Structural and Electrical Properties鈥 EMC, June 2022. (Columbus, Ohio)
  • A F M A. U. Bhuiyan, Z. Feng, H.-L. Huang, L. Meng, J. Hwang, and H. Zhao, 鈥淢OCVD Epitaxy of a-(AlxGa1-x)2O3 (x =0-100%) on m-Plane Sapphire Substrate鈥, Compound Semiconductor Week, June. 2022. (Ann arbor, Michigan)
  • A F M A. U. Bhuiyan, L. Meng, Z. Feng, H.-L. Huang, J. Hwang, H. Zhao, 鈥淚n Situ MOCVD Growth of Dielectric Al2O3 on 脽-(AlxGa1-x)2O3: Interfaces and Band Offsets鈥, 2022 MRS Spring Meeting, May. 2022. (Honolulu, Hawaii)
  • A F M A. U. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, 鈥淢OCVD Epitaxy of 脽-(AlxGa1-x)2O3 Films on (100) and (-201) 脽-Ga2O3 Substrates with Al Compositions up to 52%鈥, 2021 MRS Spring Meeting, Apr. 2021. (Virtual)
  • (Best Student Presentation Award) A F M A. U. Bhuiyan, Z. Feng, L. Meng, J. Johnson, H.-L Huang, J. Hwang and H. Zhao, 鈥淥rientation-Dependent Band Offsets at MOCVD Grown 脽-(AlxGa1鈥搙)2O3/脽-Ga2O3 Heterointerfaces鈥 EMC, June 2021. (Virtual)
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H.-L. Huang, J. Hwang, H. Zhao, 鈥淢OCVD growth and characterizations of 脽-(AlxGa1-x)2O3 thin films and N-type doping鈥, MRS Spring Meeting, Nov. 2020. (Virtual)
  • A F M A. U. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, H. Zhao, 鈥淢OCVD Growth, Characterization and Phase Transformation of (AlxGa1-x)2O3 Thin Films鈥, EMC, June 2020. (Virtual)
  • (Best Paper Award) Z. Feng, A F M A. U. Bhuiyan, M. Karim, H. Zhao, 鈥淢OCVD Epitaxy of Si-doped 脽-Ga2O3 Thin Films with Record High Electron Mobilities鈥, IWGO, Columbus, OH, Aug. 2019.
  • A F M A. U. Bhuiyan, Z. Feng, Z. Chen, J. Johnson, H.-L. Huang, J. Hwang, H. Zhao, 鈥淢OCVD Growth of 脽-(AlxGa1-x)2O3 Thin Films on Ga2O3 Substrates鈥, IWGO 2019, Columbus, OH, Aug. 2019.

Selected Intellectual Property

  • H. Zhao, A F M A. U. Bhuiyan, Z. Feng, Deposition of single-phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3 (100) or (-201) substrates by chemical vapor deposition, Patent No. US 11,624,126 (Date of Patent: Apr 11, 2023).
  • H. Zhao, A F M A. U. Bhuiyan, L. Meng, Compositions comprising galium oxide doped with carbon, and methods of making and use thereof, Application Number: 63/358,634 (US Provisional Patent Pending) (2022).
  • H. Zhao, A F M A. U. Bhuiyan, L. Meng, Compositions, methods, and devices, Application Number: 63/431,778 (US Provisional Patent Pending) (2022).
  • H. Zhao, A F M A. U. Bhuiyan, L. Meng, Compositions, methods, and devices, Application Number: 63/398,959 (US Provisional Patent Pending) (2022).